Optoelectronic and Electrochemical Properties of Vanadium Pentoxide Nanowires Synthesized by Vapor-Solid Process.

Ko-Ying Pan,Da-Hua Wei

doi:10.3390/nano6080140

Abstract

Substantial synthetic vanadium pentoxide (V2O5) nanowires were successfully produced by a vapor-solid (VS) method of thermal evaporation without using precursors as nucleation sites for single crystalline V2O5 nanowires with a (110) growth plane. The micromorphology and microstructure of V2O5 nanowires were analyzed by scanning electron microscope (SEM), energy-dispersive X-ray spectroscope (EDS), transmission electron microscope (TEM) and X-ray diffraction (XRD). The spiral growth mechanism of V2O5 nanowires in the VS process is proved by a TEM image. The photo-luminescence (PL) spectrum of V2O5 nanowires shows intrinsic (410 nm and 560 nm) and defect-related (710 nm) emissions, which are ascribable to the bound of inter-band transitions (V 3d conduction band to O 2p valence band). The electrical resistivity could be evaluated as 64.62 Ω·cm via four-point probe method. The potential differences between oxidation peak and reduction peak are 0.861 V and 0.470 V for the first and 10th cycle, respectively.

Highlights

Vanadium pentoxide, V2O5, has been fully exploited in electrochemical energy storage, catalysis and gasochromic coloration [1,2,3,4,5,6,7]
The working parameters of this process were as follows: (1) Increasing the working temperature to 800 ̋C with 26 ̋C/min was at a continual flow rate of 30 sccm Ar gas; (2) Maintaining the temperature at 800 ̋C for 1 h was at a constant flow rate of combined gas of 30 sccm Ar and 30 sccm O2; (3) Cooling to the room temperature was under a constant flow rate of 30 sccm of Ar gas
The micromorphology and microstructure of one single V2O5 nanowire were further investigated by observation of transmission electron microscope (TEM)

Summary

Introduction

V2O5, has been fully exploited in electrochemical energy storage, catalysis and gasochromic coloration [1,2,3,4,5,6,7]. V2O5 nanowires were fabricated on silicon substrates, a commercial item with a growth plane of (100), by thermal evaporation.

Results

Conclusion