Abstract
The synthesis of single-phase γ-In 2Se 2.5Te 0.5 alloy thin films with low substitution of selenium by tellurium was carried out by a direct method from In and (Se 1−xTe x) thermal evaporation and a subsequent heat treatment. A correlation between the film properties and alloy composition was observed. These γ-In 2Se 2.5Te 0.5 films changed from p-type conduction to n-type by the addition of Te, and showed a high optical absorption coefficient (α > 10 4 cm −1) and an energy gap of about 1.45 eV, narrower that of γ-In 2Se 3 thin films. An improvement of the electronic transport properties, i.e., the carrier concentration and mobility, was achieved as proved by electrical conductivity and Hall measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
