Abstract
In this work, first-principles calculations of Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 are performed to highlight the impact of the cationic substitution on the structural, electronic and optical properties of kesterite compounds. Direct bandgaps are reported with values of 1.32, 1.89 and 3.06 eV respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 and absorption coefficients of the order of 104 cm−1 are obtained, indicating the applicability of these materials as absorber layer for solar cell applications. In the second part of this study, ab initio results are used as input data to model the electrical power conversion efficiency of kesterite-based solar cells. In that perspective, we used an improved version of the Shockley–Queisser model including non-radiative recombination via an external parameter defined as the internal quantum efficiency. Based on predicted optimal absorber layer thicknesses, the variation of the solar cell maximal efficiency is studied as a function of the non-radiative recombination rate. Maximal efficiencies of 25.71%, 19.85% and 3.10% are reported respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 for vanishing non-radiative recombination rate. Using an internal quantum efficiency value providing experimentally comparable values, cell efficiencies of 15.88%, 14.98% and 2.66% are reported respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4. We confirm the suitability of Cu2ZnSnS4 in single junction solar cells, with a possible efficiency improvement of nearly 10% enabled through the reduction of the non-radiative recombination rate. In addition, Cu2ZnGeS4 appears to be an interesting candidate as top cell absorber layer for tandem approaches whereas Cu2ZnSiS4 might be interesting for transparent photovoltaic windows.
Highlights
Over the years, photovoltaic (PV) thin film technology has emerged as an interesting candidate for efficient and large-scale energy production
This technology must fulfill several criteria such as low-cost thin film synthesis, high solar cell efficiency and the materials’ resources availability and accessibility [1]. In relation to the latter point, the European Commission has identified Ga and In as critical raw materials and highlighted the scarcity of those elements used for the synthesis of inorganic chalcogenide CuInGa(S, Se)2 (CIGS) alloys implemented as absorber layer for PV applications [2]
Benefiting from the well-established knowledge of CIGS, kesterite-based solar cell efficiency gradually increased over the years, reaching values of 12.6% for Cu2ZnSn(S, Se)4 [6] and 11% for Cu2ZnSnS4 [7] using various chemical [8] or physical [9] routes for the synthesis of the kesterite thin films
Summary
EV respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 and absorption coefficients of the order of 104 cm−1 are obtained, indicating the applicability of these materials as absorber layer for solar cell applications. Based on predicted optimal absorber layer thicknesses, the variation of the solar cell maximal efficiency is studied as a function of the non-radiative recombination rate. Maximal efficiencies of 25.71%, 19.85% and 3.10% are reported respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4 for vanishing non-radiative recombination rate. Using an internal quantum efficiency value providing experimentally comparable VOC values, cell efficiencies of 15.88%, 14.98% and 2.66% are reported respectively for Cu2ZnSnS4, Cu2ZnGeS4 and Cu2ZnSiS4. We confirm the suitability of Cu2ZnSnS4 in single junction solar cells, with a possible efficiency improvement of nearly 10% enabled through the reduction of the non-radiative recombination rate.
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