Abstract
The plasma parameters and ion bombardment energy were quantitatively investigated to find the optimum condition and the correlation between the plasma conditions and film properties. The electron density (ne) of approximately 1017/m3 was obtained in the substrate region under the condition where gas pressure was 1 mTorr and both power of the microwave and RF source were 500 W, and the electron temperature (Te) and ion saturation current (I0) were in the range of 3–5 eV and 1–1.5 mA/cm2, respectively. High resistivity of TiN films above −50 V bias was attributed to the amorphization of TiN films by ion bombardment effect, which was confirmed by X-ray diffraction analysis. It was found that there was an optimum bias voltage for best-quality TiN film formation, which showed a strong correlation with the ion bombardment energy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
