Abstract

Transferring the image information in analog form between the focal plane array (FPA) and the external electronics causes the disturbance of the outside noise. On-chip analog-to-digital (A/D) converter into the readout integrated circuit (ROIC) can eliminate the possibilities of the cross-talk of noise. Also, the information can be transported more efficiently in power in the digital domain compared to the analog domain. In designing on-chip A/D converter for cooled type high density infrared detector array, the most stringent requirements are power dissipation, number of bits, die area and throughput. In this study, pipelined type A/D converter was adopted because it has high operation speed characteristics with medium power consumption. Capacitor averaging technique and digital error correction for high resolution was used to eliminate the error which is brought out from the device mismatch. The readout circuit was fabricated using 0.6 μm CMOS process for 128 x 128 mid-wavelength infrared (MWIR) HgCdTe detector array. Fabricated circuit used direct injection type for input stage, and then S/N ratio could be maximized with increasing the integration capacitor. The measured performance of the 14 b A/D converter exhibited 0.2 LSB differential non-linearity (DNL) and 4 LSB integral non-linearity (INL). A/D converter had a 1 MHz operation speed with 75 mW power dissipation at 5 V. It took the die area of 5.6 mm 2 . It showed the good performance that can apply for cooled type high density infrared detector array.

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