Abstract
An analytic MESFET device model has been used to study the optimum velocity-field characteristics of materials that are potentially useful for millimeter-wave and low-noise MESFET applications. Materials of current interest have been characterized and compared. Results explain the relative importance of parameters such as low-field mobility and saturated velocity. Differences between GaAs and Si performance are explained and a number of attractive compound semiconductors for high-frequency and low-noise device fabrications are indicated.
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