Abstract
III-Nx–V1−x highly mismatched alloys (HMAs) have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise fundamental bandgap that gives them the ability of improving the efficiency by means of below-bandgap photon absorption. The efficiency of GaNxAs1−x, GaNxP1−x, and their quaternaries InyGa1−yNxAs1−x and GaNxP1−x−yAsy is estimated theoretically versus nitrogen content in this letter. Low nitrogen content in the range of 1%–3.5% in the HMAs analyzed leads to theoretical efficiencies above 60%.
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