Abstract
The trade-off relationships between resolution, line edge roughness (LER), and sensitivity are the most critical issue in the development of chemically amplified resists used for extreme ultraviolet (EUV) lithography. The dissolution point plays an important role in determining the trade-off relationships. In this study, the relationship between dissolution point and LER (DP-LER relationship) was theoretically investigated. The dependence of the DP-LER relationship on half-pitch, normalized image log slope, and the effective reaction radius for deprotection was clarified.
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