Abstract
AbstractIn this article, we propose the optimum design of a highly linear and efficient Doherty power amplifier (DPA) considering the soft turn‐on effects of the GaN HEMT. To compensate for the soft turn‐on characteristic and obtain an extended high‐efficiency range, the DPA is designed with unequal drain biases. For experimental validations, the carrier and peaking cells are designed and implemented with the drain bias of 23 V and 33 V, respectively, using 25‐W GaN HEMTs at 2.6 GHz and then tested using a continuous wave and a one‐carrier WCDMA signal. The measured results show the superior performance for the proposed GaN HEMT DPA. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 956–959, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24210
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