Abstract
We investigate the transport behavior of two-terminal graphene ballistic devices with bias voltages up to a few volts suitable for electronics applications. Four graphene devices based ballistic designs, specially fabricated from mechanically exfoliated graphene encapsulated by hexagonal boron nitride, exhibit strong nonlinear I-V characteristic curves at room temperature. A maximum asymmetry ratio of 1.58 is achieved at a current of 60 µA at room temperature through the ballistic behavior is limited by the thermal effect at higher bias. An analytical model using a specular reflection mechanism of particles is demonstrated to simulate the specular reflection of carriers from graphene edges in the ballistic regime. The overall trend of the asymmetry ratio depending on the geometry fits reasonably with the analytical model.
Highlights
Graphene, a two-dimensional (2D) material, is a useful material for electronic devices due to its excellent transport, mechanical, thermal, and optoelectronic properties[1,2,3,4]
With the development of fabrication techniques for boron nitride (BN) encapsulation and one-dimensional contacts, the carrier mobility of graphene was measured up to ~200,000 cm[2] V−1 s−1 at room temperature[12,13]. This remarkable operation performance permits graphene to have a long carrier mean-free path (λ), which is required for a graphene-based ballistic transport device (GBTD)
We report the fabrication and electrical characterization of two-terminal GBTD fabricated from mechanically exfoliated graphene with different geometries operating at room temperature
Summary
A two-dimensional (2D) material, is a useful material for electronic devices due to its excellent transport, mechanical, thermal, and optoelectronic properties[1,2,3,4]. With the development of fabrication techniques for BN encapsulation and one-dimensional contacts, the carrier mobility of graphene was measured up to ~200,000 cm[2] V−1 s−1 at room temperature[12,13] This remarkable operation performance permits graphene to have a long carrier mean-free path (λ), which is required for a graphene-based ballistic transport device (GBTD). We report the fabrication and electrical characterization of two-terminal GBTD fabricated from mechanically exfoliated graphene with different geometries operating at room temperature These GBTDs can be considered as a geometric diode because of their asymmetric behavior depending on the direction of the current. This study offers a pathway to optimize the other GBTDs and holds promise for potential application as graphene rectifiers and energy harvesting devices
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