Abstract
An optimum composition x of MBE-ZnS x Se 1− x /GaAs has been studied by surface morphology, X-ray diffraction and fluorescence microscopic study to obtain epilayers with the best quality. The epilayers with a lattice-matching composition at the growth temperature ( x gt=0.083) had extremely smooth surfaces and the minimum FWHM of X-ray rocking curves in spite of thermal strain. Also, the orange emission due to Ga diffusion from the substrate was not observed at the epilayer-substrate interface in these epilayers. The epilayers with the best quality were grown with the composition of x gt.
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