Abstract
The effect of annealing on long-wavelength emitting InAs/Ga0.85In0.15NxAs1−x (0 ⩽ x ⩽ 0.023) quantum dots (QDs) is studied. For the as-grown sample with x = 0.023, a room temperature photoluminescence (PL) emission wavelength of 1.58 µm is achieved. It is found that the optimum annealing temperature increases when the nitrogen composition in the cap layer increases. After optimum annealing, the QD PL emission exponentially blue-shifts with the nitrogen composition, whereas the as-grown QD emission energy red-shifts with a linear behavior. This implies that to get the longest PL wavelength with the best PL efficiency, the nitrogen composition should not exceed 2%.
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