Abstract
Bragg-reflection waveguides (BRWs) fabricated from AlGaAs provide an interesting nonlinear optical platform for photon-pair generation via parametric down-conversion (PDC). In contrast to many conventional PDC sources, BRWs are made of high refractive index materials and their characteristics are very sensitive to the underlying layer structure. First, we show that the design parameters like the phase matching wavelength and the group refractive indices of the interacting modes can be reliably controlled even in the presence of fabrication tolerances. We then investigate how these characteristics can be taken advantage of when designing quantum photonic applications with BRWs. We especially concentrate on achieving a small differential group delay between the generated photons of a pair and then explore the performance of our design when realizing a Hong–Ou–Mandel interference experiment or generating spectrally multi-band polarization entangled states. Our results show that the versatility provided by engineering the dispersion in BRWs is important for employing them in different quantum optics tasks.
Highlights
IntroductionWe vary each layer parameter listed in table 1 from its specified value by +1%, while keeping the others fixed, and calculate the change in the phase matching wavelength of the graded Bragg-reflection waveguides (BRWs) shown as case (i)
In contrast to many conventional parametric down-conversion (PDC) sources, Bragg-reflection waveguides (BRWs) are made of high refractive index materials and their characteristics are very sensitive to the underlying layer structure
Our results show that the versatility provided by engineering the dispersion in BRWs is important for employing them in different quantum optics tasks
Summary
We vary each layer parameter listed in table 1 from its specified value by +1%, while keeping the others fixed, and calculate the change in the phase matching wavelength of the graded BRW shown as case (i). It is apparent, that an increment in the layer thicknesses increases the phase matching wavelength, while when regarding the aluminum contents the opposite is observed. After the epitaxial growth of the layers, their thickness can be determined and the ridge width and height can be adjusted We show this effect, which illustrates the phase matching wavelength in terms of a typical range of ridge widths for different etch depths. The tuning range provided by employing different ridge widths greatly depends on the used etch depth
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