Abstract
We have attempted to optimize the values of the giant magnetoresistance in symmetric spin valves of the type NiO/Co/Cu/Co/Cu/Co/NiO (achieving 23.4%) and in bottom spin valves of the type Co/Cu/Co/NiO (achieving 17.0%), the largest values ever reported for such structures. The key elements in this achievement are improved vacuum conditions and careful attention to the film thicknesses.
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