Abstract
AbstractShort‐wavelength infrared photo‐sensing materials are dominated by germanium, indium gallium arsenide, indium antimonide, and mercury cadmium telluride. However, the complex fabrication process and high production cost hinder their widespread applications. Recently, TexSe1‐x has shown great potential for infrared photodetection, but TexSe1‐x‐based devices are still suffering from extremely high dark current and poor device performance. In this work, high‐quality TexSe1‐x films are fabricated by thermal evaporation and low‐temperature annealing. The optoelectronic properties of the TexSe1‐x thin films are systematically investigated and optimized. The absorption spectrum is carefully tuned to cover the broad range from 300 to 1600 nm by modulating the ratio of Te and Se. Photodiodes based on the optimized TexSe1‐x thin films are also fabricated, and achieve high responsivity, reduced dark and low noise current density, and a fast response time of <850 ns. Then, prototypical devices based on Te0.65Se0.35 thin films are demonstrated for optical communications, indicating the great potential for next‐generation, low‐cost short‐wavelength infrared photodetection.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
