Abstract

REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been shown to offer good performance in a variety of application domains, both in bulk silicon and SOI substrates. This paper aims to offer a compendious and timely review of the two technologies and some works of our lab on the application of the two technologies in bulk silicon and SOI devices.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.