Abstract
The limitations on the size of single-crystal diamond applications still need to be addressed for practical use. This study systematically investigates the impact of variations in seed crystal thickness and pre-growth treatments on step bonding, defect formation, and stress distribution in the mosaic growth of single-crystal diamond films. The findings suggest that variations in seed crystal thickness within 50 μm result in a smooth mosaic junction and high crystal quality, while a 100 μm variation results in noticeable defects and stress concentrations, hindering adequate bonding. Pre-growth treatment improves crystal quality by reducing polycrystalline formations and stress concentrations. Optical microscopy and Raman mapping confirm that pre-growth treated mosaic regions exhibit smooth steps and seamless bonding, with FWHM values between 3 and 5 cm−1, consistent with the quality of non-mosaic growth regions.
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