Optimizing oxygen impurities using different heater design in the directional solidification of multi-crystalline silicon

Abstract

The numerical simulations of heat and mass transport have been carried out. The heater design has been modified. The melt convection and oxygen impurities have been analysed. The simulation has been made for conventional and modified heater design using directional solidification (DS) furnace. The results were compared and the better heater design was used to control the oxygen impurities in the mc-Silicon ingot. The reduced melt convection is obtained in the silicon melt due to the modified heater design. The modified heater design reduces the oxygen impurities in the melt and crystal. The modified heater design improves the melt-crystal (m-c) interface. It gives less concave interface shape in the periphery region near the crucible wall. The m-c interface is mainly affected by flow pattern and melt convection. The numerical results are very useful for better understanding of thermal effect and melt convection in the directional solidification system for reduction of oxygen impurities in the mc-Silicon ingots.