Optimizing of substrate properties for carbon nanotube production in radiofrequency discharge

Abstract

We have carried out synthesis of carbon nanotubes by PECVD. The main goal was to find optimum deposition parameters leading to well-controlled growth of the carbon nanotubes (CNTs). The CNTs were grown on silicon substrates with SiO2 layers (100÷200 nm thick) and catalyst layer of Fe or Ni (2÷15 nm thick). We have tried to find the optimal thickness and the way of preparation of the oxide as well as catalyst layer for the uniform synthesis of CNTs. The pre-treatment (creation of catalytic particles) was carried out in r. f. capacitively coupled discharge. We observed to creation of catalytic particles influence on conditions of pre-treatment (thickness of layer, substrate temperature, r. f. power). The properties of catalytic layers were observed by SEM. The best result of pre-treatment we have done for thickness of layer 3 mm and r. f. power 100 W.