Abstract
Advanced node (sub 2Xnm) chip manufacturing employs new fabrication techniques as well as materials. This work is focused on the Middle of Line (MoL) contact cleaning. An advanced cleaning process is developed based on the electrochemical compatibility and interactions between the chosen chemistry and exposed layers as well as contaminants to be removed. The cleaning efficacy in the trenches is verified by measuring contact resistance as well as particle/flake inspections. Tungsten integrity is verified with bright field microscopy and damage to inter layer dielectrics is monitored by measuring trench and contact critical dimensions. Other structural interactions were studied with TEM imaging. The new cleaning process yielded substantially higher number of functional die as compared to POR (Process of Record).
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