Abstract
Because of the isotropic energy band structure of the (Gamma) electrons in GaAs/AlGaAs quantum well infrared photodetector (QWIP), normal incident radiation absorption is not possible so that the optical grating and its optimization become key requirements for the QWIPs. In this work we study the optical grating structure based on Huygen's principle and Kirchhoff's formula. The theory developed in this paper is used to design the optical grating for our GaAs/AlGaAs QWIPs with responding wavelength around 8.0 micrometer. The result for the photoconductive QWIPs of 1 X 128 focal plane array (FPA) working at 80 K is presented. The theoretical model has also been used to design the grating size for the 64 X 64 FPA which results in a good FPA device performance around 8.0 micrometer.
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