Optimizing boron implantation dose of HgCdTe infrared detectors

Abstract

Using the material chip technology,large area photodiodes of n-on-p structure with different boron implantation dose are fabricated on the Hg1-xCdxTe film for mid-infrared wavelength region(x=0.291).Current-voltage characteristics of the photodiodes are measured at 77K and zero bias resistance-area products of different photodiodes are fitted from the data in the voltage range of -0.2—0.08V.The study indicated that the R0A products of different elements depended distinctly upon the implanted boron dose.A large R0 value has also obtained in another chip with x=0.2743.All the samples in this study are grown by Riber 32P molecular-beam epitaxy system and all the junctions-forming process is same to the standard planar technology but using a series of metallic masks during the boron ion implantation.