Abstract
In this work a technology for the fabrication of piezoresistivepressure sensors is presented, based on the use of silicon BESOI (bondedand etch-back silicon on insulator) wafers. The main purpose of theproposed technology is the optimization of the thin silicon diaphragmdefinition process that is one of the most critical steps in thefabrication of silicon pressure sensors. The buried silicon oxide layer ofthe BESOI wafers is used as an automatic etch stop of the siliconanisotropic etching, making it possible to obtain very precise control ofthe sensor diaphragm thickness. In addition, the type and thickness of thelayers acting as masking materials on the backside of the wafers have beenoptimized in order to get a high-yield process. The experimental resultsobtained when using the proposed technology are presented and discussed.
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