Abstract
In this paper, the sub-layers of AlGaAs/GaAs double junction (DJ) solar cell have been redesigned in order to achieve an optimum cell structure. It has been deduced with cooperation of detailed balance limit theory and structural behaviour of AlGaAs, that the Al0.45Ga0.55As is the best choice for top cell’s material in AlGaAs/GaAs DJ solar cell. Also, there is a trade-off between peak tunnelling current and transparency in tunnel junction which makes Al0.07Ga0.93As as the optimum tunnel junction of AlGaAs/GaAs cell. Finally, a smoothed reflectance senary-layer structure based on modified-DBR has been proposed to be used as anti-reflection coating of proposed structure. Also, the thickness and doping concentration level of different layers have been optimized.
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