Abstract
The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. The deposition of GaN with the variation of the gas flow inlet velocities is investigated. The influence of diffusion coefficient on the deposition of GaN is also discussed. It is found that the influence of the gas flow inlet velocities on the deposition is large and the influence of diffusion coefficient on the deposition of GaN is small in vertical HVPE.
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