Optimized Rapid Thermal Process for Selective Emitter Solar Cells

Abstract

In this paper we present an experimental approach for the realization of selective emitter by laser doping. Multi-crystalline Silicon wafers with thin layer of silicon nitride (SiNx) are treated by laser after phosphorous diffusion and PSG removal. Rapid thermal annealing temperatures from 700 to 900 °C have been used for screen printed contacts. The surface of the selective emitter before and after annealing has been observed by scanning electron microscopy (SEM). Electrical characteristics show performance amelioration of the cell efficiency.