Optimized properties of xBiInO3−(1−x)PbTiO3 thin films deposited by an RF‐magnetron sputtering method

Abstract

Ferroelectric xBiInO3−(1−x)PbTiO3 (x = 0.15, 0.20, 0.25, and 0.30) thin films are deposited on (101)SrRuO3/(100)Pt/(100)MgO substrates by an RF‐magnetron sputtering method. By adjusting the deposition conditions, the electric properties of the thin films are optimized. The ferroelectricities of the thin films show that the remnant polarizations (Pr) decrease from 43 to 34 µC cm−2 as x increases from 0.15 to 0.25, and the coercive fields (Ec) are about 177 kV cm−1. The Curie temperatures (Tc) increase from 580 to 650 °C on increasing x from 0.15 to 0.30. The results illustrate that the xBI−(1−x)PT films have high ferroelectricities, high coercive fields, and high Curie temperatures simultaneously, which may have wide potential applications in high‐temperature and ‐voltage environments.