Abstract
In this brief, we demonstrate the multilevel cell (MLC) characteristics of an HfO2-based resistive memory (RRAM) array as a synaptic element for neuromorphic systems. We utilize various programming schemes to linearly change the resistance state with either set voltage/pulse ramping or gate voltage ramping. Our results reveal that the MLC relates to the size of the conductive filament involved in the movement of oxygen vacancies with respect to applying pulses. Thus, by optimizing the pulse for a set condition, such as an identical pulse, we achieve linearly increased MLC behavior, thereby enabling a high accuracy for pattern recognition in neuromorphic systems.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
