Abstract
We have developed a photolithographic process for the fabrication of large arrays of single walled carbon nanotube transistors with high quality electronic properties that rival those of transistors fabricated by electron beam lithography. A buffer layer is used to prevent direct contact between the nanotube and the novolac-based photoresist, and a cleaning bake at 300C effectively removes residues that bind to the nanotube sidewall during processing. In situ electrical measurement of a nanotube transistor during a temperature ramp reveals sharp decreases in the ON-state resistance that we associate with the vaporization of components of the photoresist. Data from nearly 2000 measured nanotube transistors show an average ON-state resistance of 250 ± 100 kΩ. This new process represents significant progress towards the goal of high-yield production of large arrays of nanotube transistors for applications including chemical sensors and transducers, as well as integrated circuit components.
Highlights
We have developed a photolithographic process for the fabrication of large arrays of single walled carbon nanotube transistors with high quality electronic properties that rival those of transistors fabricated by electron beam lithography
We report here on a photolithographic process for fabricating large arrays of single walled carbon nanotubes (SWNTs) field effect transistors (FETs) based on a resist bilayer of Shipley 1813 positive-tone photoresist on top of Microchem SF2S, a polymethyl glutarimide (PMGI) based resist
We find that devices fabricated using the PMGI/S1813 bilayer show an ON-state resistance of 250 k ± 100 k, a range that is essentially identical to the best results that we and other groups have obtained using Electron beam lithography (EBL).[16,17,18]
Summary
We have developed a photolithographic process for the fabrication of large arrays of single walled carbon nanotube transistors with high quality electronic properties that rival those of transistors fabricated by electron beam lithography. "Optimized photolithographic fabrication process for carbon nanotube devices." AIP Advances 1, 022106. A buffer layer is used to prevent direct contact between the nanotube and the novolac-based photoresist, and a cleaning bake at 300C effectively removes residues that bind to the nanotube sidewall during processing.
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