Abstract
Organometal halide perovskite photodetectors have recently drawn significant attention due to their excellent potential to perform as broadband photodetectors. However, the photoresponse in the ultraviolet (UV) spectrum can be improved by introducing wide bandgap semiconductors. In this work, we report on a methylammonium lead iodide/p-type gallium nitride (MAPI/p-GaN) heterojunction photodetector. We demonstrate that the device is capable of detecting in the UV region by p-GaN being hybridized with MAPI. We further investigate different symmetric and asymmetric metal-electrode contacts to enhance the device performance including the response time. The asymmetric electrode configuration is found to be the most optimal configuration which results in high photoresponse (photo-responsivity is 55 mA W−1 and fall time < 80 ms). As the light illumination occurs through the GaN side, its presence ultimately reduces MAPI degradation due to efficient absorption of the UV photons by GaN film.
Highlights
Organometallic halide perovskites in the form of CH3NH3PbX3 (PVK-MAPI), have shown excellent performance in a broad absorption range.[1,2] Their excellent photoelectric conversion rate has prompted perovskite use in different optoelectronic applications
It is well known that MAPI is characterized by highly efficient photogeneration in the visible spectrum, the high-energy photons in the UV part of the spectrum cannot be accessed efficiently, as the narrow bandgap of PVK does not allow the material to operate efficiently in the aKing Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
The image pertains to an identical device prepared under the same conditions, revealing a MAPI lm thickness of around 2 mm
Summary
Organometallic halide perovskites in the form of CH3NH3PbX3 (where X denotes a halide) (PVK-MAPI), have shown excellent performance in a broad absorption range.[1,2] Their excellent photoelectric conversion rate has prompted perovskite use in different optoelectronic applications. GaN is the best candidate for this purpose, as it is highly stable and is sensitive to UV light due to its wide and direct bandgap.[20,21] PVK-nitride based heterojunction devices should be considered for PD applications.
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