Abstract
In this paper, the effect of low-temperature buffer layer on the quality of InGaAs grown on GaP/Si templates is investigated. Three different materials, InP, GaAs/InAs and InAs/InP, were grown on GaP/Si templates by molecular beam epitaxy (MBE). The interfacial states between the above materials and the GaP layer were calculated using first principles methods. It was found that the interfacial structure formed with the InAs/InP material was the most robust due to the shorter bond lengths and stronger interaction forces between the interfaces. Theoretical calculations are in agreement with the experimental results that the InGaAs grown using the InAs/InP digital alloy structure as a low temperature buffer layer has the best material quality.
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