Abstract
We have investigated InAs quantum effect devices based on both antimonides and arsenides. In an InAs quantum point contact device based on antimonides (InAs/AlGaSb), we have successfully reduced the leakage currents and observed quantum effects at around 77 K by optimizing the heterostructure growth and mesa-etched split-gate approach. Strained InAs quantum dots based on arsenides (AlInAs/AlAs/InAs/InGaAs/AlInAs) were successfully fabricated by MBE growth and mesa-etching. Blue-shifted photoluminescence was obtained from millions of quantum dots with an average lateral size of approximately 2000 Å square.
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