Abstract
Large gain-bandwidth product and low-noise avalanche photodiodes (APDs) in the long-wavelength region are required in long-haul gigabit-rate lightwave systems. We have reported a practical device structure for planar GaInAs APDs with a successful guard ring effect in buried structure APDs.1 To obtain a large gain-bandwidth product, a higher carrier concentration n-InP multiplication layer must be employed to reduce avalanche buildup time. However, this results in deterioration of the excess noise factor for GaInAs APDs. We describe a design condition for achieving a large gain-bandwidth product and low-noise performance at the same time for GaInAs buried structure APDs grown by liquid phase epitaxy (LPE).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
