Abstract
This study reports on the development and testing of a cost- and time-effective means to optimize a double-sided hemispherical patterned sapphire substrate (PSS) for highly efficient flip-chip GaN-based light-emitting diodes (LEDs). A simulation is conducted to study how light extraction efficiency (LEE) changed as a function of alteration in the parameters of the unit hemisphere for LEDs that are fabricated on a hemispherical PSS. Results show that the LEE of LED flip chip could be enhanced with the optimized hemispherical PSS by over 0.508 and is ∼115.3% higher than that of flip-chip LEDs with non-PSS. This study confirms the high efficiency and excellent capability of the optimized hemispherical PSS pattern to improve LED efficacy.
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