Abstract
Rapid thermal annealing parameters for Ga(As,N) with 0.5% N are experimentally analyzed. The criteria taken into account are the relative intensity of the observed deep level photoluminescence, the intensity of edge luminescence contributions, and the luminescence decay time. For a 60 s treatment, we find an optimum annealing temperature of 850 °C with a clear tendency of lower optimum annealing temperatures for increasing N contents. Luminescence decay times of up to 400 ps for recombination of delocalized carrier pairs match well the lifetime region specific for direct III–V semiconductors and provide clear evidence of the type-I band alignment in the Ga(As,N) samples investigated.
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