Abstract
ZnO with ZnO/ZnMgO super lattice buffer layers grown by molecular beam epitaxy on Si (100) substrates at room temperature were studied by reversing the epitaxial sequence of ZnO or ZnMgO in the super lattice buffer layers, tuning the oxygen power and the vacuum pressure. The crystal quality was improved by supper lattice buffer layers started with ZnO, using higher oxygen power, and proper vacuum pressure in the growth chamber.
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