Abstract

In this study, the optimized conditions of electrophoretic deposition (application potential, application time and concentration of stable graphene oxide (GO) suspension) for development of ultra-thin graphene film on copper substrate are introduced. The current density and deposition efficiency analysis, Ohm resistance measurement, SEM, FTIR and AFM techniques were done on prepared samples. The electrical conductivity of graphene coated copper substrate was increased three times more than bare copper. All of the carried tests showed that by increasing the key parameters of EPD, the average thickness of electrodeposited GO layers are increased continually so that the GO concentration effect is the most evident factor. The minimum sheet resistance and average thickness of electrodeposited RGO layers with uniform wrinkled morphology are achieved at EPD conditions of 2 V in 10 s and annealed at 200 °C for 1 min. The results of this research manifested that the EPD technique is a promising route to a low cost and well controllable method to fabricate a very conductive electrode base for electro-optical devices.

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