Optimization quality for indium pulse-assisted of β-Ga2O3 thin film on sapphire surface

Abstract

In the field of wide-bandgap semiconductors, fabricating high quality β-Ga2O3 films on heterogeneous substrates remains a tremendous challenge. This article innovatively uses pulsed metal-organic chemical vapor deposition (MOCVD) technology to optimize the quality of β-Ga2O3 thin film on sapphire substrates using indium pulse-assisted technology. The findings indicate that full width at half maximum of the (−201) β-Ga2O3 crystal plane orientation is reduced by 2700 arcsec after pulsed indium-assisted. The addition of pulsed indium atoms effectively suppresses the desorption of low oxide Ga2O, improving the flatness of β-Ga2O3 films surface and reduced the surface roughness from 30.1 nm to 5.4 nm. Moreover, the UV–Visible transmittance of the film exceeds 80%, accompanied by an increase in bandwidth. In combination with the XPS O1s split-peak fitting analysis, the quality of the films was optimized by using pulsed indium-assisted, resulting in a reduction in the relative content of oxygen vacancies in the film. The pulsed indium technology provides a new idea for heteroepitaxy growth of high quality β-Ga2O3 films.