Optimization of Zn2SiO4 Anode Structure for Deep Ultraviolet Generation With Carbon Nanotube Emitters

Sung Tae Yoo,Hye In Lee,Kyu Chang Park

doi:10.1109/jeds.2019.2931015

Sung Tae Yoo, Hye In Lee + Show 1 more

Open Access

https://doi.org/10.1109/jeds.2019.2931015

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Abstract

Ultraviolet (UV) light is applied to various industrial and medical devices. In particular, deep UV light with short wavelengths could minimize the damage to human cells when it is used to virus and bacterial sterilization. We optimized the Zn2SiO4 anode structure to improve deep UV light generation with a carbon nanotube (CNT) cold cathode based electron beam (C-beam) pumping. Annealing at 1000 °C and 400 mTorr produces anode with the highest deep UV intensity. Using a 100-nm SiOx layer between Zn2SiO4 and quartz substrate, the intensity of deep UV light at a wavelength of 226 nm was increased by 1.8 times.

Highlights

Deep ultraviolet (UV) has high photon energy and could be applied in many applications such as disinfection, odor removal, optical cleaning and medical uses
Mercury vapor lamps are mostly used as light sources for UV disinfection
The intensity of the deep UV was related to grain size and uniformity of Zn2SiO4

Summary

Introduction

Deep ultraviolet (UV) has high photon energy and could be applied in many applications such as disinfection, odor removal, optical cleaning and medical uses. YOO et al.: OPTIMIZATION OF Zn2SiO4 ANODE STRUCTURE FOR DEEP UV GENERATION WITH CNT EMITTERS We fabricated Zn2SiO4 by diffusing the silicon element of the SiOx layer into the ZnO layer using thermal energy in the furnace, and improved the deep UV characteristics at 226 nm by C-beam irradiation.

Results

Conclusion