Abstract
Three depth profiling techniques have been combined to optimize the buried p-(Zn)-layer for the monolithic integration of a photodiode (PD) and a field-effect transistor (FET) for optoelectronic application. The Zn diffusion behaviour during MOVPE (metal organic vapour phase epitaxy) growth has been investigated. To meet the requirements of a shallow and a wide Zn profile simultaneously in one substrate a procedure including SiN x masking, selective reactive ion etching (RIE) and substrate etching has been developed. The depth profiling analyses proved to be valuable tools for process optimization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
