Abstract
HgCdTe is promising as a material to solve a problem of development of semiconductor sources in mid- and far-infrared range due to small direct band gap. Since the compound materials HgTe and CdTe are closely lattice matched, it is possible to design a wide variety of multilayer structures based on HgCdTe. In this paper we calculate and optimize the parameters of the Hg0·8Cd0·2Te/Cd0·7Hg0·3Te separate-confinement double heterostructure which are required for lasing. It is shown that lasing at a wavelength of 10 μm for the optimal active region thickness (∼90 nm) and resonator length (∼2 mm) occurs when a lateral electric field of more than 0.96 kV/cm is applied at a temperature of 77 K. This corresponds to a small voltage of ∼10 V at a distance between metal contacts of 100 μm and the threshold current of ∼30 A.
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