Abstract
In this work we investigate the optimization of the performance of thermoelectric materials using insertion techniques. Our results indicate that in cases such as Bi2Se3 compounds, where insertion of foreign species in the lattice is possible due to the particular crystal structure, the insertion technique could be proven to be a valuable easy to apply and cost effective technique, an alternative to doping, that can produce homogeneous materials with fine tuning of the electronic and thermoelectric properties.
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