Abstract

The study is devoted to the influence of the choice of geometry and materials of wire contacts on the reflection coefficient and thermal characteristics of the photodetector and the quality of the device design. The process of diffusion of materials of wire contacts and contact pads on a photodetector crystal is investigated. The studies were carried out on samples that are rather small in size (250x250x400 um). During the experiment, 4 main types of loop geometry were selected (main loop, reverse loop, double reverse loop, long loop). The loops were formed using a gold wire 25 μm in diameter. The quality of microwelds was investigated in 3 ways: shear and pull-off tests, optical observation using a scanning electron microscope (SEM), and contact resistance measurement. The aim of the work is to create a high-quality design of an IR photodetector, which allows achieving a high sensitivity (at least 0.5 A / W), a large dynamic range (at least 40 dB) and low indicators of dark current values. The developed technology ensures high quality of the photodetector design. Due to the low costs of this technological process (wire material, the number of operations required for installation), relative to other technologies, which allows maintaining high performance in the technical component of the photodetector, the installation method may be of practical interest in production.

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