Abstract
High-mobility hydrogen-doped indium oxide In2O3:H (IOH) were deposited by magnetron sputtering (radio frequency 13.56MHz) from an In2O3 target in Ar/O2/H2O gas mixtures onto unheated substrates. The as-deposited films were amorphous as shown by X-ray measurements and were crystallized in a post-annealing step in vacuum and air at 180°C for 15 min. The optical, electrical, and morphological properties as well as the crystallization behavior of these transparent conductive oxides films were investigated in detail. A dependence of the annealing behavior in air on the total pressure during deposition could be shown. High carrier mobilities >100cm2/Vs allow for very low optical absorption and a low resistivity around 350μΩcm. Amorphous IOH films were crystallized by short-term flash lamp annealing (FLA) in argon atmosphere for around 2.7ms. Spatial temperature distributions in a typical layer stack (crystalline silicon, amorphous silicon, silicon oxide, and IOH film) were calculated within milliseconds after the FLA-treatment. Electron backscattering diffraction measurements of IOH films crystallized by FLA reveal a polycrystalline microstructure with an average lateral crystallite size of 333nm. The crystallization process of these IOH films was studied by XRD and Hall measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
