Abstract
In order to obtain higher output power and better beam quality in semiconductor disk lasers, the characteristics of the gain chip and the parameters of laser cavity are investigated theoretically and experimentally in this paper. A 1085 nm semiconductor disk laser with an output power of 2 W is demonstrated, and the M2 factor is about 1.1, which means the beam quality is good. Optimization based on wafer design, pumping method and thermal management is carried out, and the corresponding output performances are discussed. The temperatures of the active regions and the output powers of lasers with front-pumping and end-pumping schemes are compared. The results show that the front-pumped laser could tolerate bigger pump power and obtain higher output power owing to its better heat dissipation, while the end-pumped laser has smaller pump threshold and higher slope efficiency due to its better mode-matching between the pump spot and the laser spot. This investigation may provide a general guidance for better laser performance of a semiconductor disk laser.
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