Abstract
Abstract This paper presents a method for determining the optimum junction depth of a passivated emitter solar cell for a given surface dopant concentration. It takes into account the influence of the transparency factor on the recombination current, considering in the optimization two different surface recombination velocities corresponding to passivated and non-passivated zones. The results, obtained for different characteristics of the contact grid, show that the design of the emitter of a solar cell is strongly dependent on the technology used to produce the grid. Finally, the method proposed shows maximum efficiencies around 3×1019 cm−3, practically independent of the surface doping concentration depth over a large range of values.
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