Optimization of the Ion Source Parameters to Change the Proportion of Single and Molecular Ions in Plasma

Abstract

A high current Ion implanter “LUXiON” has a novel ion source which generates a “sheet beam” about 300mm high and produces ion species commonly used in silicon processing, such as boron, phosphorus, and arsenic. The source is designed to allow tuning of its source parameter to change the proportion of single and molecular ions in the plasma. By optimization of the ion source parameters, we could change the proportion of single and molecular ions. The ratio of molecular ions to single ions (BF 2 +/B+) was changed by operation conditions. The ratio in higher molecular ion mode is two times higher than single ion mode at low arc current condition, and over three times higher at high arc current conditon.