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Abstract
In this paper, the InP surface sulfidation by (NH4)2S or (NH4)2Sx solutions is investigated in order to reduce the long-term drain-current-drift of MISFET devices and the interface state density at the InP/SiO2 interface. In order to ensure good reproducibility of this treatment, a full chemical characterization of the ammonium sulfide solutions is proposed. After surface sulfidation, an annealing is done in the photo-CVD chamber before depositing the insulator: at 350 °C the initial InPS4 layer is transformed into a stable In2S3 phase without degradation of the P/In ratio. Thanks to this InP surface processing, the 1 MHz and 10 kHz C(V) characteristics of MIS diodes exhibit a deep depletion regime, Nss = 2 × 1010 eV−1 cm−2, and very little frequency dispersion. These results are very encouraging for the MISFET fabrication process.
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