Abstract
Properties of electrodeposited semiconductor thin films are dependent upon the electrolyte composition, plating time, and temperature as well as the current density and the nature of the substrate. In this study, the influence of the electrodeposition parameters such as deposition voltage, deposition time, composition of solution, and deposition temperature upon the properties of In2S3 films was analyzed by the Taguchi Method. According to Taguchi analysis, the interaction between deposition voltage and deposition time was significant. Deposition voltage had the largest impact upon the stoichiometry of In2S3 films and deposition temperature had the least impact. The stoichiometric ratios between sulfur and indium (S/In: 3/2) obtained from experiments performed with optimized electrodeposition parameters were in agreement with predicted values from the Taguchi Method. The experiments were carried out according to Taguchi orthogonal array L27 (3∧4) design of experiments (DOE). Approximately 600 nm thick In2S3 films were electrodeposited from an organic bath (ethylene glycol‐based) containing indium chloride (InCl3), sodium chloride (NaCl), and sodium thiosulfate (Na2S2O3·5H2O), the latter used as an additional sulfur source along with elemental sulfur (S). An X‐ray diffractometer (XRD), energy dispersive X‐ray spectroscopy (EDS) unit, and scanning electron microscope (SEM) were, respectively, used to analyze the phases, elemental composition, and morphology of the electrodeposited In2S3 films.
Highlights
During the last few decades solar energy has received attention due to increased environmental concerns over traditional energy resources such as coal, oil, and natural gas.Fossil fuel prices will rise over time and resources may eventually deplete
In2 S3 is an indirect band gap semiconductor with potential to become a nontoxic alternative to CdS as a buffer layer in copper indium gallium selenide/sulfide- (CIGS-) based solar cells [5, 6]
From Oxford Instruments is integrated with the scanning electron microscope (SEM) for energy dispersive X-ray spectroscopy (EDS)
Summary
During the last few decades solar energy has received attention due to increased environmental concerns over traditional energy resources such as coal, oil, and natural gas. The world’s current electricity supply is facing government, businesses, and consumer pressures to support development of alternative energy resources such as solar cells. The solar industry has come of age lately and the world’s most efficient solar cell from Sharp can convert an impressive 44.4% of incoming photon energy into electrical energy [1]. Scientists continue to research novel semiconductor materials and deposition techniques that can provide higher efficiencies and low-cost solar panels with less environmental impact upon the Earth. Electrodeposition is a low-cost, nonvacuum, and large industrial scale-based deposition technique to deposit material efficiently and uniformly. The Taguchi Method was used to optimize electrodeposition parameters in order to improve the stoichiometry of In2 S3 films, which is one of the most important properties of any photovoltaic material and critical to obtaining the desired band gap and performance. Taguchi analysis helped us to analyze the effect of each deposition parameter upon the stoichiometry of In2 S3 films
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
