Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior

Abstract

GaN field effect power transistors based on Si substrate show low on-state resistance and very small C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses evaluation during operation. Using this method, we evaluate in a single measurement the transistors temperature and losses versus a chosen dead time or versus frequency. At least, we conclude on good practices regarding the drive of these components.